METHOD AND DEVICE FOR PRODUCING NITRIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a production method for obtaining a bulky nitride single crystal, in which it is possible to control the generation of a nucleus and by which the nitride single crystal having a high quality and a large size can be obtained at a relatively low temperature and low pressure. SOLUTION: A seed crystal is placed in a raw material for growing the nitride single crystal and then a crystal is grown by locally heating the seed crystal. Especially, it is preferable that crystal growth is carried out in such a manner that the seed crystal is locally heated while maintaining the temperature of the raw material for growing the nitride single crystal at a temperature at which the crystal hardly grows so that the temperature of the raw material present in the vicinity of the seed crystal is maintained at a high temperature at which the crystal can grow.