| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus where the defects of a mask for electron beam exposure is inspected at a high speed. SOLUTION: In order to inspect the defects of the mask M for electron beam exposure, a mask signal S3 is obtained on the basis of transmitted electrons 2Ba obtained by two-dimensional scanning of the mask M with an electron beam scanner 2. On the basis of CAD data DT for the manufacture of the mask M, a CAD signal S4 corresponding to a CAD graphic is obtained, in synchronization with the output of the mask signal S3. On the basis of the comparison result of the mask signal S3 with the CAD signal S4, the defect of the mask M is inspected. |
