APPARATUS FOR FABRICATING III-V NITRIDE FILM AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A method for fabricating a III-V nitride film is provided to fabricate the III-V nitride film including at least an aluminum element by a hydride vapor phase epitaxy(HVPE) method, by eliminating or reducing the influence of erosion caused by AlCl gas. CONSTITUTION: A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. The hydrogen gas and the ammonia gas are heated by heater. A III-V nitride film including at least Al element is epitaxially grown on the substrate by using an HVPE method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.