发明名称 PRODUCTION METHOD FOR SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide an effective production method for a sputtering target large in scale and also having a fully homogenous fine structure, without a conventional process requiring long term and high-load energy. SOLUTION: This production method for the sputtering target is characterized in that a raw material of the sputtering target is melted and cast to form a cast ingot, the hot-top part of this ingot is removed, and thereafter, the cast ingot thus obtained is subjected to hot press to be compress-worked to a required shape.
申请公布号 JP2002069625(A) 申请公布日期 2002.03.08
申请号 JP20000265554 申请日期 2000.09.01
申请人 MITSUI MINING & SMELTING CO LTD 发明人 SERA YOSHIHIRO;KATSURAGI SEIGO
分类号 C23C14/34;C22C5/04;C22C19/07;G11B5/851;(IPC1-7):C23C14/34 主分类号 C23C14/34
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