发明名称 |
PRODUCTION METHOD FOR SPUTTERING TARGET |
摘要 |
PROBLEM TO BE SOLVED: To provide an effective production method for a sputtering target large in scale and also having a fully homogenous fine structure, without a conventional process requiring long term and high-load energy. SOLUTION: This production method for the sputtering target is characterized in that a raw material of the sputtering target is melted and cast to form a cast ingot, the hot-top part of this ingot is removed, and thereafter, the cast ingot thus obtained is subjected to hot press to be compress-worked to a required shape.
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申请公布号 |
JP2002069625(A) |
申请公布日期 |
2002.03.08 |
申请号 |
JP20000265554 |
申请日期 |
2000.09.01 |
申请人 |
MITSUI MINING & SMELTING CO LTD |
发明人 |
SERA YOSHIHIRO;KATSURAGI SEIGO |
分类号 |
C23C14/34;C22C5/04;C22C19/07;G11B5/851;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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