| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating a defect in a silicon single-crystal wafer, wherein not only a body defect such as a void, a precipitate or the like existing inside the silicon single-crystal wafer such as a silicon wafer or the like but also a plane defect or a linear defect can be observed simply and precisely, and the defect can be observed simply and precisely as a three- dimensional distribution. SOLUTION: In the method, a crystal defect existing in the silicon single- crystal wafer is evaluated. A copper segregation treatment is executed to the single-crystal wafer so as to be copper-decorated, the single-crystal wafer is cleaved, an infrared laser beam is made incident from its cleavage plane by using an infrared tomographic defect inspection apparatus, and the tomographic image of a copper segregation part inside a crystal is obtained by the scattered light of the infrared laser beam.
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