发明名称 PRODUCTION DEVICE FOR SEMICONDUCTOR SINGLE CRYSTAL AND METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a device capable of efficiently transferring radiant heat from a single crystal to the outside of a crystal growing furnace when a CZ single crystal pulled from a molten raw material is cooled and forming a preferable cooling atmosphere suitable for the growing condition of the single crystal. SOLUTION: A crucible 12 is provided at the inside of a growing furnace main body 2, and a section forming a recovery space is integrally formed at the upper part of the growing furnace main body in a communicatable form. A crystal cooling cylinder 25 has a cylindrical or conical form as a whole and is arranged so as to surround the semiconductor single crystal pulled from a molten raw material. The upper part, engaged to the section 4 forming the recovery space, of the crystal cooling cylinder 25 is set as a forcedly cooling section 5 having such a structure that a cooling medium is circulated through its inside so as to forcedly transfer the radiant heat from the semiconductor single crystal pulled from the molten raw material to the outside of the growing furnace. The lower part, situated right above the molten raw material, of the crystal cooling cylinder 25 is set as a graphite cooling section 10. Furthermore, a metal cooling section 8 is arranged between the forcedly cooling section 5 and the graphite cooling section 10.
申请公布号 JP2002068887(A) 申请公布日期 2002.03.08
申请号 JP20000263165 申请日期 2000.08.31
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 SAKURADA MASAHIRO;MIZUISHI KOJI;FUSEGAWA IZUMI
分类号 C30B29/06;C30B15/00;(IPC1-7):C30B29/06 主分类号 C30B29/06
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