发明名称 PRODUCTION METHOD FOR TITANIUM NITRIDE FILM
摘要 PROBLEM TO BE SOLVED: To provide a production method for a titanium nitride film, capable of forming the titanium nitride film good in quality and having functions such as a reflection property suitable for a surface-treatment film of, for example a cathode-ray tube, a photoabsorption property for contact improvement, the prevention of leak of electromagnetic field, and the like. SOLUTION: The titanium nitride film can be formed by keeping a partial pressure of residual water in atmosphere for film-forming at 0.3% or below to a total pressure, when this titanium film is formed by a reactive sputtering method.
申请公布号 JP2002069614(A) 申请公布日期 2002.03.08
申请号 JP20000265763 申请日期 2000.09.01
申请人 SONY CORP 发明人 ARAKI MUNEYA
分类号 G02B1/10;C01B21/076;C23C14/06;C23C14/34;G02B1/11;H01J9/20 主分类号 G02B1/10
代理机构 代理人
主权项
地址