| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing zinc selenide (ZnSe) single crystal, by which a p-type or n-type zinc selenide single crystal having a low electrical resistance is directly, easily and surely grown from a melt. SOLUTION: The method of growing the zinc selenide single crystal comprises controlling the molar ratio (Zn/Se) of Zn to Se, each being a raw material, to be in the range of 0.95 to 1.05, enclosing the raw materials in an enclosable crucible and growing a crystal from the melt by a vertical Bridgman method or a vertical temperature gradient method. In this method, the n-type or p-type single crystal is obtained by leading the raw materials to the Zn-excess side or the Se-excess side.
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