METHOD FOR FORMING SILICON CARBIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a silicon carbide film differing in a crystalline structure with ease and also good repeatability using a low- temperature process. SOLUTION: Electrolytic dissociated ion species, containing a methylsilylene ion, methylsilicenium ion or methylsilane ion, are obtained by exiting methylsilane or dimethylsilane to form a plasma and decomposing the plasma, using a low energy ion beam irradiation equipment. The above electrolytic dissociate ions alone are polarized while keeping an applied state so that an ion beam incident voltage is controlled to gain an energy of 0.1 eV or above and below 100 eV. A crystalline structure of 4 H type or 3C type, or an SiC film of their mixed crystal structure is formed on a substrate at a film-forming temperature of 750 deg.C or below by irradiating this polarized ion beam on the substrate.