METHOD OF FORMING EPITAXIAL THIN FILM ON SURFACE OF SINGLE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a new method for forming an epitaxial thin film of a multiple oxide comprising a rare earth metal and aluminum on an alumina single crystal substrate. SOLUTION: The method for forming the epitaxial thin film comprises forming the epitaxial thin film of the multiple oxide having a compositional ratio of rare earth metal : aluminum : oxygen of 1:1:3. The method for forming the epitaxial thin film comprising the rare earth metal and aluminum on the alumina single crystal comprises dissolving a rare earth metal-containing organic compound into a solvent, then stirring the resulting mixture to obtain a uniform solution, coating the solution onto the surface of the alumina single crystal, drying the coated film to form a thin film and heating/firing the thin film.