METHOD FOR FORMING ISOLATION REGION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation region of a semiconductor device is provided to shorten an interval of time for forming the isolation region, by reducing processes for forming a trench oxide layer and annealing an insulation material to one process. CONSTITUTION: A silicon oxide layer(120) is formed on a semiconductor substrate(100). A predetermined portion of the silicon oxide layer and the semiconductor substrate under the predetermined portion are continuously etched to form a trench. An insulation material(160) is filled in the trench. The semiconductor substrate of the sidewall and bottom of the trench filled with the insulation material is oxidized to form a trench oxide layer(180) on the sidewall and bottom of the trench. The insulation material and the silicon oxide layer remaining on the semiconductor substrate are continuously polished by a mechanical polishing method until the surface of the semiconductor substrate is exposed, so that the isolation region is formed.