发明名称 DEVICE FOR DEPOSITING ESPECIALLY, CRYSTALLINE LAYERS ON ONE OR MORE SUBSTRATES, ESPECIALLY SUBSTRATES WHICH ARE ALSO CRYSTALLINE
摘要 The invention relates to a device for depositing especially, crystalline layers onto one or more substrates, especially substrates which are also crystalline, in a process chamber (1), using reaction gases which are guided into said process chamber (1), where they undergo pyrolytic reaction. The device comprises a reverse-heatable support plate (3) which forms a wall of the process chamber and which can especially be heated with a high frequency, consisting of especially inertly coated graphite; a gas inlet mechanism (6) which is located in the centre of the process chamber (1), said process chamber having a circular cross-section, and which is allocated to a cover plate (4) that is situated at a distance from the support plate (3); and a gas outlet ring (5) which forms the outer limit of the process chamber (1) and which has a plurality of radial gas outlets (25). According to the invention, the gas outlet ring (5) consists of solid graphite in order to keep the isothermal profile inside the process chamber as flat as possible.
申请公布号 WO0218670(A2) 申请公布日期 2002.03.07
申请号 WO2001EP08886 申请日期 2001.08.01
申请人 AIXTRON AG;JUERGENSEN, HOLGER;STRAUCH, GERD;KAEPPELER, JOHANNES 发明人 JUERGENSEN, HOLGER;STRAUCH, GERD;KAEPPELER, JOHANNES
分类号 C23C16/455;C23C16/44;C30B25/14;H01L21/205 主分类号 C23C16/455
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