| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to prevent an interlayer dielectric of a low dielectric constant on an upper electrode from being over-etched in a chemical mechanical polishing process regarding the interlayer dielectric covering a capacitor, by forming a groove defining a lower electrode formation portion in a pre-metal insulation layer and by forming the lower electrode in the groove. CONSTITUTION: The pre-metal insulation layer is formed on a substrate(20). An etch stop layer(22) and a sub layer are sequentially formed on the pre-metal layer. A predetermined portion of the sub layer is removed to form a groove. The groove is filled with the first metal layer(250). A dielectric layer and the second metal layer(270) are sequentially formed on the first metal layer and the sub layer. The second metal layer is patterned and left to correspond to a part of the first metal layer. An interlayer dielectric is formed on the remaining first metal layer and the dielectric layer.
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