| 摘要 |
PURPOSE: A semiconductor device is provided to increase a margin of a trench etch margin, by forming a conductive layer of a predetermined thickness under the second plug so that a trench for the second plug is decreased by the thickness of the conductive layer. CONSTITUTION: A plurality of gates(33) are formed on a semiconductor substrate. An insulation layer sidewall is formed on both side surfaces of the gate. The first insulation layer is formed along the surface of the substrate. The first interlayer dielectric(36) of a predetermined thickness is formed on the first insulation layer. The second insulation layer is formed on the first interlayer dielectric. A plurality of the first plugs(38) are connected to the substrate, penetrating the second insulation layer, the first interlayer dielectric and the first insulation layer. The second interlayer dielectric(39) of a predetermined thickness is formed on the substrate. A storage node contact(40) and a plurality of conductive layers are connected to the first plug, penetrating the second interlayer dielectric. A barrier layer(41) and a bit line(42) are stacked on a partial region of the storage node contact. The third insulation layer is formed along the surface of the substrate. The third interlayer dielectric(44) of a predetermined thickness is formed on the third insulation layer. The second plug(47) is connected to the conductive layer, penetrating the third interlayer dielectric and the third insulation layer.
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