| 摘要 |
<p>This invention provides the structure and fabrication process of a completely planar, Damascene double gated transistor (100). The structure has a novel self-aligned, hyper-abrupt retrograde body (130) and a zero-parasitic, endwall gate-body connection. The structure (100) provides for increased density and enables ultra low power to be utilized. The methods also provide for simultaneously making both four-terminal and dynamic threshold MOSFET devices.</p> |
