| 摘要 |
PURPOSE: Provided is a method for forming an edge emphasized phase shift mask, which improves the yield and the productivity of semiconductor elements, therefore, it can integrate highly the semiconductor elements. CONSTITUTION: The method comprises the steps of: forming a chromium layer(23) on a quartz substrate(21); etching the chromium layer(23) to form the patterns of the chromium layer(23); forming a material layer for spacer on the whole surface containing the patterns of the chromium layer(23), wherein the material layer for spacer is a chromium layer(27) or a phase shift layer; etching the whole surface of the material layer for spacer by a dry method to form the spacer on the side wall of the patterns of the chromium layer(23). |
