MOS-controlled thyristor with improved switch=off power

摘要

The thyristor has a base layer (1) of a first conductivity with two main surfaces. In the first main surface is formed a first main electrode region (7) of the first conductivity, while in the second main surface of the base layer is formed a second main electrode region (3) of a second conductivity. A pair of grooves (4) extend in the base layer from the first electrode region mutually opposite at a preset spacing. In the grooves are formed insulating gate control electrodes (5) while an IGTO transistor structure (8,9,10) releases charge carriers of second conductivity from the base layer. A channel layer of second conductivity is provided at the bottom of the base layer part between the grooves to form a switch-on IGFET.