THIN-FILM FORMATION APPARATUS AND THIN-FILM FORMATION PROCESS

摘要

PURPOSE: A thin-film formation apparatus having a chamber consisting basically of a sputtering space and a film-forming space and a grid plate disposed between the sputtering space and the film-forming space, and a thin-film formation process making use of this apparatus are provided. CONSTITUTION: The thin-film formation process for forming a thin film by means of a sputtering apparatus having a chamber comprising a sputtering space and a film-forming space and a grid plate disposed between the sputtering space and the film-forming space comprises the steps of placing a target and a substrate in the sputtering space and the film-forming space, respectively; maintaining the pressure in the film-forming space at a pressure lower than the pressure in the sputtering space and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate and the substrate; and sputtering the target to form a thin film on the substrate. The thin-film formation apparatus comprises a chamber(22) comprising a sputtering space(34) for placing a target(23) therein and a film-forming space(35) for placing therein a substrate(28) on which a thin film is to be formed; a grid plate(36) disposed between the sputtering space(34) and the film-forming space(35); and a pressure control means for maintaining the pressure in the film-forming space(35) at a pressure lower than the pressure in the sputtering space(34) and a pressure sufficient for sputtered particles to move in the film-forming space with their mean free path which is longer than the distance between the grid plate(36) and the substrate(28).