METHOD FOR FORMING CONTACT HOLE FOR DUAL DAMASCENE INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole for a dual damascene interconnection of a semiconductor device is provided to form a contact hole exposing a lower layer even if a photoresist layer is thick, by performing an etch process after sufficient selectivity is guaranteed. CONSTITUTION: The first and second intermetallic dielectrics are sequentially formed on a lower metal layer pattern(420) formed on a semiconductor substrate(400). The first photoresist layer pattern is formed on the second intermetallic dielectric. A part of the second intermetallic dielectric is removed by using the first photoresist layer pattern as an etch mask to form the second intermetallic dielectric pattern(445) exposing a partial surface of the first intermetallic dielectric. The first photoresist layer pattern is removed. A photoresist layer(460) covering the exposed surface of the first intermetallic dielectric and the second intermetallic dielectric pattern is formed. An exposure process is performed regarding the resultant structure. A selective substitution reaction is generated regarding the surface of the photoresist layer to form a passivation layer(465) on the photoresist layer in a non-exposed portion. A plasma etch process is performed by using the passivation layer as an etch mask to form the second photoresist layer pattern exposing a partial surface of the first intermetallic dielectric. The exposed portion of the first intermetallic dielectric is removed by using the second photoresist layer pattern as an etch mask to form the first intermetallic dielectric pattern exposing a part of the lower metal layer pattern. The second photoresist layer pattern is eliminated.