METHOD AND APPARATUS FOR CONTROLLING PLASMA ETCH

摘要

PURPOSE: A method for controlling plasma etch is provided to reduce damage in an etch process and to modify an etch rate, by performing a phase inversion from an oscillator having radio frequency in a chamber to which the radio frequency is applied by a phase split so that different power having inverted phases is supplied to upper and lower electrodes. CONSTITUTION: A radio frequency waveform of a reference frequency is converted by an inverted phase to independently output frequencies having an inversion phase difference. A single set-up power is ratio-controlled and outputted. Each ratio-controlled power having each frequency of the inversion phase difference is applied to the upper and lower electrodes(38,39).