METHOD FOR FORMING INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to control an increase of contact resistance of a contact plug in the interlayer dielectric and to prevent a bridge of a self-aligned contact, by controlling a porous interface layer between the first and second layers of the interlayer dielectric. CONSTITUTION: A predetermined portion of a semiconductor substrate(300) is confined as an active region by an isolation layer. The first interlayer dielectric(314) is formed on the semiconductor substrate. The first interlayer dielectric is etched back by an in-situ method. The second interlayer dielectric is formed on the etched-back first interlayer dielectric.