| 摘要 |
<p>The invention concerns a Hall-effect sensor consisting of a multilayer structure comprising a thin semiconductor material layer deposited on a semiconductor substrate (12), the two layers being electrically insulated with an insulation. The invention is characterised in that the substrate (12) is a n+-type semiconductor material whereon is deposited an insulating material consisting of a p- type semiconductor layer (13), and the thin active layer (14) is of the n- type doped in exhaustion mode. Preferably, the active layer consists of a silicon carbide or a gallium nitride layer.</p> |
