发明名称 METHOD FOR FABRICATION OF HIGH INDUCTANCE INDUCTORS AND RELATED STRUCTURE
摘要 According to various embodiments, a conductor (200) is patterned in a dielectric. The conductor can be patterned, for example, in the shape of a square spiral. The conductor can comprise, for example, copper, aluminum, or copper-aluminum alloy. The dielectric (202) can be, for example, silicon oxide or a low-k dielectric. Trenches (203, 205, 207, 209) are etched next to the patterned conductor in the dielectric. The trenches are filled with a material having a permeability substantially higher than the permeability of the dielectric. The high permeability material can be, for example, nickel, iron, nickel-iron alloy, or magnetic oxide. As a result, an inductor having a high inductance value is achieved without lowering the quality factor of the inductor.
申请公布号 WO0219351(A1) 申请公布日期 2002.03.07
申请号 WO2001US26449 申请日期 2001.08.24
申请人 CONEXANT SYSTEMS, INC. 发明人 LIU, Q., Z.;HOWARD, DAVID
分类号 H01F17/00;H01F17/04;H01F41/04;(IPC1-7):H01F5/00 主分类号 H01F17/00
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