| 摘要 |
PURPOSE: A method for manufacturing a lower electrode of a capacitor in a semiconductor device is provided to improve a reliability of the lower electrode by forming a nitride pattern between amorphous silicon patterns as a bridge barrier between capacitors. CONSTITUTION: An interlayer dielectric(202) having a contact hole is formed on a semiconductor substrate(200) having transistors. A conductive plug(203) is filled into the contact hole. After sequentially forming a first nitride layer(204) and a first oxide layer on the resultant structure, a trench is formed by selectively etching the first oxide. A second nitride layer(209) is formed in the trench. After removing the first oxide, a second oxide is formed on the second and first nitride layers(209,204). Amorphous silicon patterns(211) are formed on the exposed conductive plug(203) and both sidewalls of the second oxide. After removing the second oxide, HSGs(Hemi-Spherical Grains)(213) are formed on the entire surface of the amorphous silicon patterns(211).
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