| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve reliability, by reducing a loss of a plug while anisotropically etching an interconnection when the interconnection and the plug are simultaneously formed. CONSTITUTION: An interlayer dielectric having a contact hole(23) is formed on a substrate(21). A metal layer of which the surface is flat is formed on the interlayer dielectric, filling the contact hole. The metal layer is firstly and anisotropically etched to make the metal layer overlap the contact hole corresponding to the metal layer so that the interconnection(33) and the plug(31) are formed. The metal layer remaining on the substrate is secondly etched wherein etch selectively is not greater than 1.
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