| 摘要 |
PURPOSE: A method for forming an image sensor capable of increasing the area of photodetecting surface is provided to increase an effective area of a photodiode in a pixel and to stably guarantee a saturation level of a complementary-metal-oxide-semiconductor(CMOS) image sensor, by simply changing a process without a variation of a design rule or micro lens. CONSTITUTION: An oxidation process is performed to form an isolation layer while a plurality of oxide layer patterns are formed on a semiconductor substrate in the photodetecting area. The oxide layer pattern in the photodetecting area is removed to form a flection on the semiconductor substrate. An ion implantation process is performed to form a photodetecting unit having a flection in the semiconductor substrate of the photodetecting area.
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