| 摘要 |
The present invention relates to a semiconductor light-emitting device used for optical transmission (particularly for IEEE 1394) and displays and the like. More specifically, an object of the present invention is to provide a semiconductor light-emitting device capable of emitting the light with a high efficiency by extending a distance from an active layer to a boundary having poor crystal quality due to Group V elements As and P exchange to suppress deterioration in crystal quality of the active layer. According to the present invention, a semiconductor light-emitting device capable of emitting the light with a high efficiency because a reflecting multilayer with a different material system from that of an active layer is formed on the substrate in order to achieve a high reflectance, however, the active layer is formed, after a reflecting multilayer formed with the same material system as that of the active layer is formed thereon, to lengthen a distance between the active layer and a material system exchange boundary.
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