Semiconductor integrated circuit device and method of manufacturing the same

摘要

Collector regions (32, 33) with films capable of withstanding high voltage by laminating 4 epitaxial layers when the collector regions (32, 33) are formed. In order to reduce effects caused by interference between the transistors (21, 22) and also reduce parasitic transistor, the epitaxial layers and substrate are etched in a V-groove. Each etched region is dielectrically isolated by the poly-Si (42).