发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A method of manufacturing a semiconductor device is provided to achieve high production yield. CONSTITUTION: A method of manufacturing a semiconductor device comprises a step of (a) preparing a substrate in which a plurality of electrode members are individually placed on one main surface thereof in separated form, (b) a step of placing a semiconductor chip on the one main surface of the substrate and electrically connecting a plurality of electrodes formed on one main surface of the semiconductor chip and the plurality of electrode members respectively, (c) a step of forming a resin encapsulater for sealing the semiconductor chip and the plurality of electrode members on the one main surface of the substrate, and (d) a step of separating the semiconductor chip and the plurality of electrode members from the substrate together with the resin encapsulater.
申请公布号 KR20020018103(A) 申请公布日期 2002.03.07
申请号 KR20010052441 申请日期 2001.08.29
申请人 HITACHI.LTD. 发明人 ARAI KATSUO;DANNO TADATOSHI;SHIMIZU ICHIO
分类号 H01L23/28;H01L21/56;H01L21/60;H01L21/68;H01L23/12;H01L23/31 主分类号 H01L23/28
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