| 发明名称 |
METHOD OF PREPARING A SEMICONDUCTOR SUBSTRATE FOR SUBSEQUENT SILICIDE FORMATION |
| 摘要 |
A method for preparing a semiconductor substrate for subsequent silicide formation. In one embodiment, the present invention subjects the semiconductor substrate to an ashing environment. In the present embodiment, the ashing environment is comprised of H2O vapor, and a gaseous fluorcarbon or a fluorinated hydrocarbon gas. In so doing, contaminants (310) on the semiconductor substrate are removed. Next, the present invention subjects a mask (208) covering a polysilicon stack to a mask-removal ashing environment. In the present embodiment, the mask-removal ashing environment is comprised of an O2 plasma. In so doing, the mask covering the polysilicon stack is removed. As a result, the semiconductor substrate and the top surface of the polysilicon stack are prepared for subsequent silicide formation thereon.
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| 申请公布号 |
WO0152311(A3) |
申请公布日期 |
2002.03.07 |
| 申请号 |
WO2001US00854 |
申请日期 |
2001.01.10 |
| 申请人 |
PHILIPS SEMICONDUCTORS, INC.;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
YEH, EDWARD, K.;GABRIEL, CALVIN, TODD;SENGUPTA, SAMIT |
| 分类号 |
H01L21/28;G03F7/42;H01L21/027;H01L21/304;H01L21/3065;H01L21/311;(IPC1-7):H01L21/321;H01L21/285 |
主分类号 |
H01L21/28 |
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