| 摘要 |
<p>In a method for determining the condition of the surface, such as thickness or reflectivity, of any specific location on a wafer (16) during a chemical mechanical polishing (CMP), at first, a location of a measurement site on the wafer surface is selected. Second, a picture (22) of the surface within the measurement site is taken, for example, through a window (14). Third, the picture is analyzed. This provides an exact endpointing and an exact final thickness of a specific layer on the wafer.</p> |
