METHOD FOR PRODUCING HIGH PERFORMANCE SiGe HETERO- JUNCTION BIPOLAR TRANSISTOR BiCMOS ON SILICON ON INSULATOR

摘要

PURPOSE: A high performance SiGe hetero-junction bipolar transistor BiCMOS on a silicon wafer on an insulator for achieving the performance of SiGe HBT is provided. CONSTITUTION: A semiconductor structure is provided with an SOI wafer, the CMOS formed on the wafer and the SiGe HBT formed on the wafer. In the method for producing the semiconductor structure, this method includes a process for controlling the SOI wafer having a plurality of active areas thereon, a process for forming the CMOS in the first active area on the wafer, and a process for forming the SiGe HBT in the other active area on the wafer.