| 摘要 |
PURPOSE: A method for forming a self-aligned metal fuse of a semiconductor device is provided to improve precision of a process and to decrease the number of process steps, by forming the self-aligned metal fuse while using a dual photomask process and a difference of etch rates of photoresist. CONSTITUTION: A glue layer(22), a metal layer(23) and an anti-reflective coating(ARC)(24) are sequentially formed on a substrate(21) including a metal interconnection region and a metal fuse region. The first photoresist of the first thickness is applied and selectively patterned to be left only on the metal fuse region. After the first photoresist is patterned, light reactivity of the first photoresist is removed by a hard backing process. The second photoresist(26) of the second thickness thicker than the first thickness is applied and selectively patterned to be left only on the metal line region. Stacked material layers are etched until the first photoresist is completely eliminated. Additionally-stacked material layers are patterned by using only the second photoresist to form a metal interconnection and a metal fuse line.
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