| 摘要 |
PURPOSE: An isolation method for a semiconductor device is provided to reduce junction capacitance, by forming an additional buried insulation layer in the periphery of an isolation layer so that the size of a doping region is physically decreased and a source/drain junction area is reduced. CONSTITUTION: An isolation region and an active region are defined in a semiconductor substrate(31). The isolation region is eliminated to form a trench. An oxygen ion buried layer is formed in the active region adjacent to the trench. The oxygen ions are reacted with the semiconductor substrate to form a buried oxide layer(370) extending to the active region. The trench is filled with an insulation material.
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