| 摘要 |
PURPOSE: A method for forming a storage node electrode of a semiconductor memory device is provided to eliminate a defect occurring when a sacrificial insulation layer in a peripheral region is removed and to improve step coverage of an outermost region and a substrate region, by using a photolithography process using only one mask so that a photoresist pattern is formed in the peripheral region and the outermost region. CONSTITUTION: The sacrificial insulation layer is formed on a structure(10) of a semiconductor substrate to define a pattern region of the storage node electrode. The sacrificial insulation layer corresponding to a cell region(100) of the substrate is etched to form an opening(18) where a lower contact plug is opened. A conductive material is formed on the sacrificial insulation layer having the opening. The resultant structure is etched by a planarization process to eliminate the conductive material on the sacrificial insulation layer so that a storage node electrode pattern is formed. The photoresist pattern(22) masking the sacrificial insulation layer of the substrate corresponding to the peripheral region(200) of a cell and the outermost region(300) is formed. The sacrificial insulation layer except the peripheral region and the outermost region is wet-etched by using the photoresist pattern. The photoresist pattern is removed.
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