| 摘要 |
PURPOSE: A control circuit is provided to prevent a parasitic bipolar leakage current owing to a body charge-up by minimizing unnecessary current consumption when precharging current paths of SOI transistors. CONSTITUTION: A semiconductor integrated circuit(200) comprises a precharge transistor(202), a pre-discharge transistor(204), NMOS transistors(206, 208, 210, 212) formed by an SOI technique, a PMOS transistor(214), and an inverter(216). The precharge transistor(202) is controlled by a precharge control signal(PRE_CLK), and the pre-discharge transistor(204) is controlled by a pre-discharge control signal(DIS_CLK). A precharge and pre-discharge control circuit(100) generates the control signals(PRE_CLK, DIS_CLK) in response to a clock signal(CLK) and an enable signal indicating an operating/non-operating mode of the circuit(200) so that the first node(N11) is precharged with a power supply voltage when the clock signal(CLK) is at a low level and so that the second node(N12) is pre-discharged in response to the clock signal when the enable is activated.
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