| 摘要 |
PURPOSE: A method for forming dual damascene interconnection is provided to improve gap-filling property of an organic BARC(Bottom Anti-Reflective Coating) by using dual damascene processing. CONSTITUTION: A multi-layer insulating layer made of a first SiN layer(32), a first SiO2(33), a second SiN(34) and a second SiO2(35) is formed on a semiconductor substrate(31). A via-hole is formed by etching the multi-layer insulating layer using a via-hole pattern. In order to prevent the degradation of pattern profile, two organic BARC layers(38a,38b) are coated on the resultant structure including the via-hole by using dual damascene processing. A trench(40) is formed by sequentially etching the organic BARC layers(38a,38b) and the multi-layer insulating layer.
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