| 摘要 |
In order to eliminate the drawback of an electric heating element formed on an insulating ceramic substrate so that the element is brittle and becomes soft at a high temperature, an electrically heat-generating material film having a microstructure composed of a silicide alone, a mixture of silicide and Si, or Si alone is fused to the surface of a nitride or carbide ceramic insulating substrate. In order to provide an electrostatic chuck by which the temperature of an electrostatically chucked object to be treated, such as a semiconductor substrate, is quickly and precisely controlled, a heating mechanism is coupled with the bottom face of an electrostatically chucking mechanism provided with a dielectric ceramic and electrodes formed on the bottom face of the ceramic, and a cooling mechanism is coupled with the bottom face of the heating mechanism. The heating mechanism has a fusable electric-heating material film between two ceramic insulating substrates having the same or nearly the same coefficients of thermal expansion. The films is fused to the substrates.
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