发明名称 Refresh control for semiconductor memory device
摘要 In the operation cycle, memory chip 200 initiates a refresh operation in synchronism with an external clock signal CLK after a refresh timing signal RFTM has been issued. In snooze mode (low power consumption mode), a refresh operation is initiated in response to generation of a refresh timing signal RFTM, regardless of a clock signal CLK.
申请公布号 US2002027820(A1) 申请公布日期 2002.03.07
申请号 US20010935693 申请日期 2001.08.24
申请人 SEIKO EPSON CORPORATION 发明人 MIZUGAKI KOICHI
分类号 G11C7/10;G11C11/403;G11C11/406;G11C11/407;(IPC1-7):G11C7/12 主分类号 G11C7/10
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