| 摘要 |
The invention is a charged particle beam exposure method, wherein exposure data having exposure pattern data is generated from pattern data, and a material is exposed accoring with the exposure data; comprising the steps of: (a) generating plural correction areas with respect to the patterns; (b) dividing a long and narrow pattern of the pattern data into a plurality of patterns; (c) determining a pattern area density within the correction areas, and revising the pattern density of the correction area according with surrounding patterns.; (d) determining a main quantity of exposure for each divided pattern according with the highest corrected pattern density; (e) generating supplementary exposure patterns in the correction areas within the divided patterns with a shortage of exposure energy in the case of the main quantity of exposure. An optimum main quantity of exposure is determined for each divided pattern to reduce the number of supplementary exposure patterns.
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