| 摘要 |
<p>A method of depositing a nitrogen rich nitride film, such as a tantalum nitride (TaN) film, which can be used with low-k dielectric films. An initial nitrogen rich layer is achieved by exposing a target to a nitrogen rich atmosphere prior to sputtering the target and deposition of the sputtered target material onto a substrate. Thereafter, the flow of N2 can be controlled during processing to create a desired nitrogen concentration in the film. The nitrogen flow may be held constant during processing, varied during processing, or terminated during processing to control the nitrogen concentration in the layer(s).</p> |
