| 摘要 |
<p>A processing system (12) for processing a substrate with an ionized plasma comprises a processing chamber (13) defining a processing space (14) and including a substrate support (17) therein for supporting a substrate (18) in the processing space. A gas inlet (20) introduces a process gas into said processing space (14) and a plasma source is operable for creating an ionized plasma in the processing space from process gas introduced therein. The plasma source comprises an inductive element (24) operable for coupling electrical energy into the processing space to create an ionized plasma therein. The inductive element (24) winds around a portion of the processing space (14) inside the processing chamber (13) and is encased inside a dielectric material (30) to physically separate the element from the processing space while allowing the element to couple electrical energy into the processing space. Alternatively, the inductive element is coupled to a DC power supply (98) for enhancing the magnetization of the inductive element (24) to reduce the capacitive coupling of energy between the inductive element and the plasma.</p> |
