发明名称 |
Vertikaler Feldeffekt-Transistor und Verfahren zu dessen Herstellung |
摘要 |
The invention relates to a field-effect transistor comprising a vertical series of layers consisting of a drain layer, a channel layer, and of a source layer, whereby a gate dielectric and a gate electrode are laterally arranged in at least one chamfered area located on the outer side of the channel layer.
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申请公布号 |
DE10040458(A1) |
申请公布日期 |
2002.03.07 |
申请号 |
DE20001040458 |
申请日期 |
2000.08.18 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BENEDIX, ALEXANDER;KLEHN, BERND |
分类号 |
H01L21/336;H01L29/04;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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