| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to eliminate the necessity for a source overlap and to prevent the device from being varied according to the variation of the length of the source overlap, by forming an active layer on the sidewall of a lower gate in forming a thin-film-transistor(TFT). CONSTITUTION: A predetermined oxide layer pattern is formed on a semiconductor substrate(31). A gate oxide layer(33) and polysilicon are formed on the entire surface including the oxide layer pattern. The polysilicon is blank-etched back to form a gate electrode(32) on both sidewalls of the oxide layer pattern. The oxide layer pattern and the gate oxide layer are selectively removed to expose the surface of the semiconductor substrate. Source/drain is formed in the semiconductor substrate by an impurity ion implantation process in which the gate electrode is used as a mask.
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