| 摘要 |
PURPOSE: An image sensor having a planarization layer on a micro lens is provided to improve a characteristic of optical sensitivity and minimize a damage of an image sensor. CONSTITUTION: An insulating layer(202) is formed on a photo diode(201). The insulating layer(202) is formed with a multi-oxide layer. A passivation layer(203) is formed on the insulating layer(202). The passivation layer(203) is formed with an oxide layer or an oxide/nitride layer. A color filter array(204) and an over-coating material layer(205) are formed on the passivation layer(203). The color filter array(204) is formed with a photoresist. A micro lens(206) is formed on the over-coating material layer(205). A nitride layer(207) is formed on the micro lens(206). An oxy-nitride layer(208) is formed on the nitride layer(207). The oxy-nitride layer(208) is used as an anti-reflective coating layer. A planarization oxide layer(209) is formed on the oxy-nitride layer(208).
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