| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to reduce an RSCE(Reverse Short Channel Effect) and to prevent a punch-through by using HALO implantation before forming a gate electrode. CONSTITUTION: A HALO implanted layer(22) is formed on a silicon substrate(21) by implanting HALO ions, such as BF2 ions. After forming a polysilicon layer on the silicon substrate. the polysilicon is transformed to a single crystalline silicon layer(24) by furnace curing. A gate oxide(25) and a gate electrode(26) are sequentially formed on the resultant structure. A lightly doped drain region(27) is formed in the silicon substrate by implanting lightly doped dopants using the gate electrode as a mask. After forming spacers(28) at both sidewalls of the gate electrode, source and drain regions(29) are formed in the silicon substrate(21) by implanting heavily doped dopants.
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