| 摘要 |
PURPOSE: A storage node reticle of a semiconductor device is provided to prevent a pattern from being deformed and to guarantee a maximum net die, by performing an exposure process regarding a die(in the case of a scanner) or region(in the case of a stepper) covering a wafer and an outside area of the wafer by using a clear box. CONSTITUTION: A field region(31) is composed of a plurality of dies, and a real pattern is formed in the field region. Clear boxes are positioned in the upper and lower portions of the field region, in which a pattern having the same size as the die is not included in the clear boxes. Dummy clear boxes(32) do not have the same size as a die positioned in the right, left, upper and lower portions of the field region. An exposure process is firstly performed regarding a wafer edge region by using a field. An exposure process is secondly performed regarding only a die or region positioned across the wafer and the outside area of the wafer by using the clear box or dummy clear box.
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