METHOD FOR PROCESSING SURFACE OF SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for processing the surface of a semiconductor wafer is provided to eliminate contaminant generated in an edge and to reduce a process defect, by irradiating a heat source to the semiconductor wafer. CONSTITUTION: Heat energy is supplied to only the surface of the edge(100a) of the semiconductor wafer(100) so that the surface and the contaminant of the edge are melted and re-crystallized. The heat source(104) is locally irradiated by using laser, electron beam or incoherent white light. The laser is pulse laser or continuous wave laser. A field emission apparatus or thermal emission apparatus is used as an apparatus for generating the electron beam.