METHOD AND APPARATUS FOR REMOVING SILICON CARBIDE FROM SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: Provided are a method and an apparatus for removing silicon carbide from a semiconductor substrate while holding the thickness of the substrate and the identity of its surface composition. CONSTITUTION: A substrate including a silicon carbide is prepared(100). The silicon carbide formed on the substrate is oxidized so as to form a silicon oxide by heating the substrate(102). The silicon oxide is then removed from the substrate to remove silicon carbide from the substrate(104).