| 摘要 |
PURPOSE: A method for forming a lower electrode made of a tungsten nitride layer is provided to improve a leakage current characteristic caused by reduction of the thickness of a dielectric layer, by using the tungsten nitride layer of which the step coverage is excellent while a metal organic chemical vapor deposition(MOCVD) method or atomic layer deposition(ALD) method is used. CONSTITUTION: An interlayer dielectric(12) covering a semiconductor substrate(10) having a lower structure is formed. A plug connected to the semiconductor substrate through the interlayer dielectric is formed. A sacrificial layer is formed to cover the plug and the interlayer dielectric. The sacrificial layer is selectively etched to form an opening exposing the plug. The tungsten nitride layer is formed on the resultant structure. The tungsten nitride layer is eliminated until the sacrificial layer is exposed. The sacrificial layer is removed to form the lower electrode(23) made of the tungsten nitride layer.
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